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1 Bardeen, John
[br]b. 23 May 1908 Madison, Wisconsin, USAd. 30 January 1991 Boston, Massachusetts, USA[br]American physicist, the first to win the Nobel Prize for Physics twice.[br]Born the son of a professor of anatomy, he studied electrical engineering at the University of Wisconsin. He then worked for three years as a geophysicist at the Gulf Research Laboratories before taking a PhD in mathematical physics at Princeton, where he was a graduate student. For some time he held appointments at the University of Minnesota and at Harvard, and during the Second World War he joined the US Naval Ordnance Laboratory. In 1945 he joined the Bell Telephone Laboratories to head a new department to work on solid-state devices. While there, he and W.H. Brattain in 1948 published a paper that introduced the transistor. For this he, Brattain and Shockley won the Nobel Prize for Physics in 1956. In 1951 he moved to the University of Illinois as Professor of Physics and Electrical Engineering. There he worked on superconductivity, a phenomenon described in 1911 by Kamerling-Onnes. Bardeen worked with L.N. Cooper and J.A.Schrieffer, and in 1972 they were awarded the Nobel Prize for Physics for the "BCS Theory", which suggested that, under certain circumstances at very low temperatures, electrons can form bound pairs.[br]Principal Honours and DistinctionsNobel Prize for Physics (jointly with Brattain and Shockley) 1956, (jointly with Cooper and Schrieffer) 1972.Further ReadingIsaacs and E.Martin (eds), 1985, Longmans Dictionary of 20th Century Biography.IMcN -
2 Electronics and information technology
See also: INDEX BY SUBJECT AREA[br]Byron, Ada AugustaNapier, JohnRiche, Gaspard-Clair-François-MarieSchickhard, WilhelmBiographical history of technology > Electronics and information technology
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3 Electricity
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4 Brattain, Walter Houser
SUBJECT AREA: Electronics and information technology[br]b. 10 February 1902 Amoy, China (now Hsiamen)d. 13 October 1987 Seattle, Washington, USA[br]American physicist and co-inventor of the transistor.[br]Born of American parents in China, he was brought up on a cattle-ranch and graduated from Whitman College, Walla Walla, Washington, in 1924. He then went to the University of Minnesota, where he obtained a PhD in 1929. The same year he joined the staff of Bell Telephone Laboratories as a research physicist and there, during the First World War, he worked on the magnetic detection of submarines. For his work on the invention and development of the transistor, he was awarded the 1956 Nobel Prize for Physics jointly with John Bardeen and William Shockley. He retired in 1967. His interests have been concentrated on the properties of semiconductors such as germanium and silicon.[br]Principal Honours and DistinctionsNobel Prize for Physics (jointly with Bardeen and Shockley) 1956.Further ReadingIsaacs and E.Martin (eds), 1985, Longmans Dictionary of 20th Century Biography.IMcNBiographical history of technology > Brattain, Walter Houser
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5 Shockley, William Bradford
[br]b. 13 February 1910 London, Englandd. 12 August 1989, Palo Alto, California, USA.[br]American physicist who developed the junction transistor from the point contact transistor and was joint winner (with John Bardeen and Walter H. Brattain) of the 1956 Nobel Prize for physics.[br]The son of a mining engineer, Shockley graduated from the California Institute of Technology in 1932 and in 1936 obtained his PhD at the Massachusetts Institute of Technology. In that year, he joined the staff of Bell Telephone Laboratories.Since the early days of radio, crystals of silicon or similar materials had been used to rectify alternating current supply until these were displaced by thermionic valves or tubes. Shockley, with Bardeen and Brattain, found that crystals of germanium containing traces of certain impurities formed far better rectifiers than crystals of the material in its pure form. The resulting device, the transistor, could also be used to amplify the current; its name is derived from its ability to transfer current across a resistor. The transistor, being so much smaller than the thermionic valve which it replaced, led to the miniaturization of electronic appliances. Another advantage was that a transistorized device needed no period of warming up, such as was necessary with a thermionic valve before it would operate. The dispersal of the heat generated by a multiplicity of thermionic valves such as were present in early computers was another problem obviated by the advent of the transistor.Shockley was responsible for much development in the field of semiconductors. He was Deputy Director of the Weapons Systems Evaluation Group of the US Department of Defense (1954–5), and in 1963 he was appointed the first Poniatoff Professor of Engineering Science at Stanford University, California. During the late 1960s Shockley became a controversial figure for expressing his unorthodox views on genetics, such as that black people were inherently less intelligent than white people, and that the population explosion spread "bad" genes at the expense of "good" genes; he supported the idea of a sperm bank from Nobel Prize winners, voluntary sterilization and the restriction of interracial marriages.[br]Principal Honours and DistinctionsNobel Prize for Physics 1956.Further ReadingI.Asimov (ed.), 1982, Biographical Encyclopedia of Science and Technology, New York: Doubleday \& Co.IMcNBiographical history of technology > Shockley, William Bradford
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6 Noyce, Robert
SUBJECT AREA: Electronics and information technology[br]b. 12 December 1927 Burlington, Iowa, USA[br]American engineer responsible for the development of integrated circuits and the microprocessor chip.[br]Noyce was the son of a Congregational minister whose family, after a number of moves, finally settled in Grinnell, some 50 miles (80 km) east of Des Moines, Iowa. Encouraged to follow his interest in science, in his teens he worked as a baby-sitter and mower of lawns to earn money for his hobby. One of his clients was Professor of Physics at Grinnell College, where Noyce enrolled to study mathematics and physics and eventually gained a top-grade BA. It was while there that he learned of the invention of the transistor by the team at Bell Laboratories, which included John Bardeen, a former fellow student of his professor. After taking a PhD in physical electronics at the Massachusetts Institute of Technology in 1953, he joined the Philco Corporation in Philadelphia to work on the development of transistors. Then in January 1956 he accepted an invitation from William Shockley, another of the Bell transistor team, to join the newly formed Shockley Transistor Company, the first electronic firm to set up shop in Palo Alto, California, in what later became known as "Silicon Valley".From the start things at the company did not go well and eventually Noyce and Gordon Moore and six colleagues decided to offer themselves as a complete development team; with the aid of the Fairchild Camera and Instrument Company, the Fairchild Semiconductor Corporation was born. It was there that in 1958, contemporaneously with Jack K. Wilby at Texas Instruments, Noyce had the idea for monolithic integration of transistor circuits. Eventually, after extended patent litigation involving study of laboratory notebooks and careful examination of the original claims, priority was assigned to Noyce. The invention was most timely. The Apollo Moon-landing programme announced by President Kennedy in May 1961 called for lightweight sophisticated navigation and control computer systems, which could only be met by the rapid development of the new technology, and Fairchild was well placed to deliver the micrologic chips required by NASA.In 1968 the founders sold Fairchild Semicon-ductors to the parent company. Noyce and Moore promptly found new backers and set up the Intel Corporation, primarily to make high-density memory chips. The first product was a 1,024-bit random access memory (1 K RAM) and by 1973 sales had reached $60 million. However, Noyce and Moore had already realized that it was possible to make a complete microcomputer by putting all the logic needed to go with the memory chip(s) on a single integrated circuit (1C) chip in the form of a general purpose central processing unit (CPU). By 1971 they had produced the Intel 4004 microprocessor, which sold for US$200, and within a year the 8008 followed. The personal computer (PC) revolution had begun! Noyce eventually left Intel, but he remained active in microchip technology and subsequently founded Sematech Inc.[br]Principal Honours and DistinctionsFranklin Institute Stuart Ballantine Medal 1966. National Academy of Engineering 1969. National Academy of Science. Institute of Electrical and Electronics Engineers Medal of Honour 1978; Cledo Brunetti Award (jointly with Kilby) 1978. Institution of Electrical Engineers Faraday Medal 1979. National Medal of Science 1979. National Medal of Engineering 1987.Bibliography1955, "Base-widening punch-through", Proceedings of the American Physical Society.30 July 1959, US patent no. 2,981,877.Further ReadingT.R.Reid, 1985, Microchip: The Story of a Revolution and the Men Who Made It, London: Pan Books.KF
См. также в других словарях:
Bardeen, John — born May 23, 1908, Madison, Wis., U.S. died Jan. 30, 1991, Boston, Mass. U.S. physicist. He earned a Ph.D. in mathematical physics from Princeton University. He worked for the U.S. Naval Ordnance Laboratory during World War II, after which he… … Universalium
Bardeen, John — ► (1908 91) Físico estadounidense. Fue premio Nobel de Física en dos ocasiones: la primera, en 1956, compartido con W. B. Shockley y W. H. Brattain, por sus trabajos relativos al descubrimiento de los transistores; la segunda, en 1972, compartido … Enciclopedia Universal
Bardeen , John — (1908–1991) American physicist Bardeen, the son of a professor of anatomy, was born in Madison, Wisconsin, and studied electrical engineering at the University of Wisconsin. He obtained his PhD in mathematical physics at Princeton in 1936.… … Scientists
Bardeen,John — Bar·deen (bär dēnʹ), John. 1908 1991. American physicist. He shared a Nobel Prize in 1956 for the development of the electronic transistor and in 1972 for a theory of superconductivity. * * * … Universalium
Bardeen — John … Scientists
Bardeen — Bardeen, John … Enciclopedia Universal
John R. Schrieffer — John Robert Schrieffer (* 31. Mai 1931 in Oak Park, Illinois) ist ein amerikanischer Physiker. Schrieffer erhielt 1972 zusammen mit Leon N. Cooper und John Bardeen den Nobelpreis für Physik „für ihre gemeinsam entwickelte Theorie des… … Deutsch Wikipedia
Bardeen — (John) (1908 1991) physicien américain. P. Nobel en 1956 (travaux sur les semiconducteurs, invention, en 1954, du transistor) et 1972 (travaux sur la supraconductivité) … Encyclopédie Universelle
John Bardeen — Infobox Scientist name = John Bardeen imagesize = 110px caption = John Bardeen birth date = birth date|1908|5|23|df=y birth place = Madison, Wisconsin, USA death date = death date and age|1991|1|30|1908|5|23 death place = Boston, Massachusetts… … Wikipedia
Bardeen-Cooper-Schrieffer — Die BCS Theorie ist eine Vielteilchentheorie zur Erklärung der Supraleitung in Metallen. Die BCS Theorie wurde 1957 von John Bardeen, Leon N. Cooper und John R. Schrieffer entwickelt. Der Name leitet sich aus den Anfangsbuchstaben der Nachnamen… … Deutsch Wikipedia
Bardeen-Cooper-Schrieffer-Theorie — Die BCS Theorie ist eine Vielteilchentheorie zur Erklärung der Supraleitung in Metallen. Die BCS Theorie wurde 1957 von John Bardeen, Leon N. Cooper und John R. Schrieffer entwickelt. Der Name leitet sich aus den Anfangsbuchstaben der Nachnamen… … Deutsch Wikipedia